PART |
Description |
Maker |
IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET technology, Ultra Low On-Resistance, P-Channel MOSFET generation v technology
|
International Rectifier
|
IRF7304 |
Generation V Technology
|
International Rectifier
|
IRLML2402GTRPBF |
Generation V Technology
|
International Rectifier
|
8T49N012 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
NPT2021 NPT2022 NPT2024 NPA1006 |
Next generation high power RF semiconductor technology
|
M/A-COM Technology Solu...
|
IRF7343PBF IRF7343TRPBF |
generation v technology HEXFET Power MOSFET
|
International Rectifier
|
IRLML5103PBF11 IRLML5103TRPBF |
Lead-Free, Fast Switching, Available in Tape and Reel generation v technology
|
International Rectifier
|
IRF7503 IRF7503TR |
Generation V Technology Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
|
International Rectifier
|
KRF7301 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
IRF7389 IRF7389TR |
Generation v technology 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|